Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

被引：72

作者：

Ren, Zhi ^{[1
]}

Taskin, A. A. ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 07期

关键词：

SINGLE DIRAC CONE; SURFACE-STATE; BI2TE3;

D O I：

10.1103/PhysRevB.84.075316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition, where a high level of compensation is achieved, the resistivity exceeds 0.5 Omega cm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.

引用

页数：6

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