High-resolution in-situ study of gold electromigration: test time reduction

被引:3
|
作者
Croes, K
Dreesen, R
Manca, J
De Ceuninck, W
De Schepper, L
Tielemans, L
Van der Wel, P
机构
[1] Mat Res Inst, B-3590 Diepenbeek, Belgium
[2] Xpeqt, B-3980 Tessenderlo, Belgium
[3] Philips Semicond, NL-6539 AE Nijmegen, Netherlands
关键词
D O I
10.1016/S0026-2714(01)00179-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electromigration behaviour of a large set of gold interconnections is studied using the high-resolution in-situ measurement technique. First, initial resistance drifts (DeltaR/R-0=0.1%) have been recorded on only one sample for each stress level in a broad matrix of stress levels. Using these measurements, the activation energy and the current exponent have been determined accurately. Second, failure times (DeltaR/R-0=10%) and values for sigma have been obtained by applying higher stress levels on a population of test lines. A combination of this two-step procedure with our high-resolution equipment yields a full characterisation of gold electromigration and a lifetime prediction with a significant higher accuracy and far less measurement time than using low resolution test systems. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1439 / 1442
页数:4
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