Band-Edge Diagrams of Core-Shell Semiconductor Dots

被引:3
|
作者
Pistol, M. -E. [1 ]
Pryor, C. E. [2 ,3 ]
机构
[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden
[2] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[3] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2011年 / 115卷 / 22期
基金
瑞典研究理事会;
关键词
QUANTUM DOTS; OPTICAL GAIN; BLINKING; MECHANISM;
D O I
10.1021/jp1094195
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have calculated band-edge diagrams for spherical core shell nanocrystal quantum dots for all combinations of AlN, GaN, and InN, as well as all combinations of AlP, GaP, AlAs, GaAs, InP, In As, AlSb, GaSb, and LnSb, as a function of core radius, with the outer radius of the shell held fixed. We have calculated the Gamma- and the X-conduction band minima, the valence band maximum, and the effective masses using strain-dependent eight-band kp theory, with a linear continuum model for the strain. We have found all the band alignments that may occur, and identified all combinations where one material becomes metallic due to a negative gap. Structures which are suitable for biological applications have been identified. We provide a figure which allows easy calculation of the confinement energy using a single band model.
引用
收藏
页码:10931 / 10939
页数:9
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