Short-cavity edge-emitting lasers with deeply etched distributed Bragg mirrors

被引：23

作者：

Höfling, E ^{[1
]}

Werner, R ^{[1
]}

Schäfer, F ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 02期

关键词：

D O I：

10.1049/el:19990133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-cavity edge-emitting lasers with deeply etched distributed Brace reflectors (DBRs) of third and second order were realised by reactive ion etching on GaInAs/AlGaAs layer structures. Diffraction limited reflectivities were achieved for third order dry etched DBR mirrors. Devices with DBRs on both cavity ends allow lasing operation for cavity lengths as short as 40 mu m.

引用

页码：154 / 155

页数：2

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