Novel phosphors based on porous materials

被引：4
|
作者：
Tiginyanu, I. M. [1 ,2 ]
Ursaki, V. V. [1 ]
Sirbu, L. [2 ]
Enaki, M. [2 ]
Monaico, E. [2 ]
机构：
[1] Moldavian Acad Sci, Inst Appl Phys, Kishinev 2028, Moldova
[2] Tech Univ Moldova, Natl Ctr Mat Study & Testing, Kishinev 2004, Moldova
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 7 | 2009年 / 6卷 / 07期
关键词：
PORES; EU;
D O I：
10.1002/pssc.200881116
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Technological conditions have been developed for the preparation of nanocomposite phosphors based on porous InP, GaP and GaAs semiconductor as well as Al2O3 and TiO2 dielectric templates doped with rare earth and transition metal ions. Semiconductor and dielectric templates are prepared by electrochemical treatment of bulk semiconductor substrates and metallic plates, respectively. Doping is performed by impregnation from liquid solutions followed by thermal treatment. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1587 / +
页数：2
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