Hydrogenated amorphous silicon thin-film transistor on plastic with an organic gate insulator

被引：13

作者：

Won, SH ^{[1
]}

Hur, JH ^{[1
]}

Lee, CB ^{[1
]}

Nam, HC ^{[1
]}

Chung, JK ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期

关键词：

amorphous materials; plastic films; thin-film transistors;

D O I：

10.1109/LED.2003.817368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed a high-performance, hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) on plastic substrate using an organic gate insulator. The TFT with a silicon-nitride (SiNchi) gate insulator exhibited a field-effect mobility of 0.3 cm(2)/Vs and a threshold voltage of 5 V. On the other hand, an a-Si:H TFT with an organic gate insulator of BCB (benzocyclobutene) has a field-effect mobility of 0.4 cm(2)/Vs and a threshold voltage of 0.7 V. The leakage currents through the gate insulator of an a-Si:H TFT with an organic gate insulator is about two orders of magnitude lower than that of an a-Si:H TFT with a SiNchi gate insulator.

引用

页码：132 / 134

页数：3

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