Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors

被引：2

作者：

Amat, E. ^{[1
]}

Martin-Martinez, J. ^{[1
]}

Gonzalez, M. B. ^{[2
]}

Rodriguez, R. ^{[1
]}

Nafria, M. ^{[1
]}

Aymerich, X. ^{[1
]}

Verheyen, P. ^{[2
]}

Simoen, E. ^{[2
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] IMEC, B-3001 Louvain, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期

关键词：

MOSFETS;

D O I：

10.1116/1.3523396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The channel hot-carrier (CHC) degradation in metal-oxide semiconductor field-effect transistors based on a high-k dielectric with strained-Si/relaxed Si1-xGex structures has been little studied so far. However, due to the high mobility enhancement observed in these samples, a deeper study of the CHC impact on them is necessary. In this article, the effects of the Ge content, overgrowth, channel length, and operating temperature on the CHC degradation have been analyzed. The results show that devices with higher mobility suffer larger CHC aging both at room temperature and in the elevated temperature range. (c) 2011 American Vacuum Society. [DOI: 10.1116/1.3523396]

引用

页数：4

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