Development of a new system of solid ionic conductors based on multi-doped ceria for application in IT-SOFCs

被引：0
|
作者：
Stojmenovic, Marija [1 ]
Nisic, Neda [1 ]
Zunic, Milan [2 ]
Basoli, Francesco [3 ]
Gulicovki, Jelena [1 ]
Ristovic, Ivica [4 ]
Kragovic, Milan [1 ]
机构：
[1] Univ Belgrade, Vinca Inst Nucl Sci, Natl Inst Republ Serbia, Belgrade 11351, Serbia
[2] Univ Belgrade, Inst Multidisciplinary Res, Kneza Viseslava 1, Belgrade 11000, Serbia
[3] Univ Campus Biomed Roma, Dept Engn, Via Alvaro Portillo 21, I-00128 Rome, Italy
[4] Univ Belgrade, Fac Min & Geol, Dusina 7, Belgrade 11000, Serbia
来源：
PROCESSING AND APPLICATION OF CERAMICS | 2022年 / 16卷 / 04期
关键词：
CeO2; sintering; electrical conductivity; impedance spectroscopy; fuel cells; ELECTRICAL-PROPERTIES; CE1-XERXO2-DELTA X=0.05-0.20; OPTICAL-PROPERTIES; TEMPERATURE; ELECTROLYTE; CONDUCTIVITY; MORPHOLOGY; CATALYSIS; CEO2;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Nanosized multi-doped ceria with composition Ce0.8Nd0.0025Sm0.0025Gd0.005Dy0.095Y0.095O2-d (CNSGDY) as perspective solid ionic conductor was obtained by modified glycine-nitrate procedure (MGNP) and room tem-perature self-propagating reaction (SPRT). The pressed pellets of both powders were sintered at 1550 ? for 2 h in an air atmosphere. The obtained sintered samples were characterized by XRPD, Raman spectroscopy, FESEM, EDS and EIS methods. Despite a high temperature of sintering, XRPD and FESEM analyses of the samples confirmed appropriate dimensions of grains with fluorite structure. Overall concentration of intro-duced dopants (x = 0.2) in the structure of CeO2 after the sintering process was confirmed by EDS analysis. After sintering, Raman spectroscopy confirmed retention of the oxygen vacancies in the ceria lattice, which is in accordance with the improvement of ionic conductivity of solid ionic conductors. The highest value of total conductivity was obtained for the sintered MGNP sample at 700 ? (4.22 x 10(-2) S cm-(1)), with the correspond-ing activation energy of 0.26 eV.
引用
收藏
页码：391 / 401
页数：11
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