Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors

被引：6
|
作者：
Yu, Shunyang [1 ]
Yi, Mingdong [1 ]
Ma, Dongge [1 ]
机构：
[1] Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 10期
关键词：
organic transistor; charge transport; energetic disorder;
D O I：
10.1016/j.tsf.2007.11.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：3346 / 3349
页数：4
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