Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

被引：39
|
作者：
Chu, Chunshuang [1 ,2 ]
Tian, Kangkai [1 ,2 ]
Zhang, Yonghui [1 ,2 ]
Bi, Wengang [1 ,2 ]
Zhang, Zi-Hui [1 ,2 ]
机构：
[1] Hebei Univ Technol, Inst Micronano Photoelect & Electromagnet Technol, Sch Elect & Informat Engn, Tianjin 300401, Peoples R China
[2] Key Lab Elect Mat & Devices Tianjin, 5340 Xiping Rd, Tianjin 300401, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 04期
基金：
中国国家自然科学基金;
关键词：
deep ultraviolet light-emitting diodes; external quantum efficiency; internal quantum efficiency; light extraction efficiency; ELECTRON BLOCKING LAYER; EXTRACTION EFFICIENCY; OPTICAL-PROPERTIES; ALN; INJECTION; GROWTH; MG; IMPROVEMENT; PERFORMANCE; SUBSTRATE;
D O I：
10.1002/pssa.201800815
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) are featured with small size, DC driving, no environmental contamination etc., and they are now emerging as the excellent solid-state light source to replace the conventional mercury based light tubes. Nevertheless, the DUV LEDs are currently affected by the poor external quantum efficiency (EQE), which is caused by the low internal quantum efficiency (IQE) and the very unsatisfying light extraction efficiency (LEE). In this work, the authors disclose the underlying mechanism for the low EQE and summarize the technologies that have been adopted so far for enhancing the EQE.
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页数：12
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