Design optimization of low-noise HEMTs

被引：0

作者：

Mateos, J ^{[1
]}

González, T ^{[1
]}

Pardo, D ^{[1
]}

Hoel, V ^{[1
]}

Bollaert, S ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A complete analysis of low-noise 0.1 mum gate HEMTs has been performed by using a semiclassical Monte Carlo simulation. The validity of the model has been checked through the comparison of the simulated results with static, dynamic and noise experimental measurements in real HEMTs. The extrinsic parameters of the devices have been added to the usual intrinsic small-signal equivalent circuit, thus making possible the calculation of the real noise of the HEMTs. The reliability of the simulator allows us to realize computer experiments which makes faster and cheaper the optimization process of the device design with the aim of shortening the gate length.

引用

页码：1777 / 1778

页数：2

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