Study of nickel silicide formation on Si(1 1 0) substrate

被引：10
|
作者：
Guo, Xiao
Yu, Hao
Jiang, Yu-Long [1 ]
Ru, Guo-Ping
Zhang, David Wei
Li, Bing-Zong
机构：
[1] Fudan Univ, ASIC, Shanghai 200433, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 24期
关键词：
Nickel silicide; Si(110) substrate; Rapid thermal annealing; Schottky contacts; SOLID-PHASE REACTION; THIN-FILMS; NISI2; LAYERS; DIFFUSION; NI2SI; SURFACE; NI;
D O I：
10.1016/j.apsusc.2011.07.052
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 degrees C annealing for Si(1 0 0) substrate, but a higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate, which is demonstrated by X-ray diffraction (XRD) and Raman scattering spectroscopy. The higher formation temperature of NiSi is attributed to the larger Ni2Si grain size formed on Si(1 1 0) substrate. Ni silicided Schottky contacts on both Si(1 0 0) and Si(1 1 0) substrates were also fabricated for electrical characteristics evaluation. It clearly reveals that the rectifying characteristics of NiSi/ n- Si(1 1 0) Schottky contacts is inferior to that of NiSi/ n- Si(1 0 0) Schottky contacts, which is attributed to a lower Schottky barrier height and a rougher contact interface. The formation kinetics for nickel silicide on Si(1 1 0) substrate is also discussed in this paper. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：10571 / 10575
页数：5
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