FORMATION AND STRUCTURE OF EPITAXIAL NICKEL SILICIDE ON SI(111)

被引:55
|
作者
YANG, WS
JONA, F
MARCUS, PM
机构
[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1983年 / 28卷 / 12期
关键词
D O I
10.1103/PhysRevB.28.7377
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7377 / 7380
页数:4
相关论文
共 50 条
  • [1] EPITAXIAL CUBIC IRON SILICIDE FORMATION ON SI(111)
    KAFADER, U
    PIRRI, C
    WETZEL, P
    GEWINNER, G
    [J]. APPLIED SURFACE SCIENCE, 1993, 64 (04) : 297 - 306
  • [2] EPITAXIAL SILICIDE FORMATION IN THE MG/SI(111) SYSTEM
    WIGREN, C
    ANDERSEN, JN
    NYHOLM, R
    KARLSSON, UO
    [J]. SURFACE SCIENCE, 1993, 289 (03) : 290 - 296
  • [3] FABRICATION AND STRUCTURE OF EPITAXIAL TERBIUM SILICIDE ON SI(111)
    KAATZ, FH
    VANDERSPIEGEL, J
    GRAHAM, WR
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 514 - 516
  • [4] EPITAXIAL ER SILICIDE FORMATION ON SI(111) IN THE MONOLAYER RANGE
    WETZEL, P
    PIRRI, C
    BOLMONT, D
    GEWINNER, G
    [J]. APPLIED SURFACE SCIENCE, 1993, 65-6 : 718 - 724
  • [5] FABRICATION AND STRUCTURE OF EPITAXIAL ER SILICIDE FILMS ON (111) SI
    DAVITAYA, FA
    PERIO, A
    OBERLIN, JC
    CAMPIDELLI, Y
    CHROBOCZEK, JA
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2198 - 2200
  • [6] FORMATION OF EPITAXIAL CSCL-TYPE IRON SILICIDE ON SI(111)
    KAFADER, U
    TUILIER, MH
    PIRRI, C
    WETZEL, P
    GEWINNER, G
    BOLMONT, D
    HECKMANN, O
    CHANDESRIS, D
    MAGNAN, H
    [J]. EUROPHYSICS LETTERS, 1993, 22 (07): : 529 - 535
  • [7] INFLUENCE OF OXYGEN ON THE FORMATION OF EPITAXIAL ERBIUM SILICIDE FILM ON [111]SI
    GRIMALDI, MG
    YAN, XS
    SCERRA, G
    RAVESI, S
    SPINELLA, C
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (07) : 974 - 976
  • [8] ELECTRONIC-STRUCTURE OF EPITAXIAL ERBIUM SILICIDE FILMS ON SI(111)
    WETZEL, P
    HADERBACHE, L
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    [J]. SURFACE SCIENCE, 1991, 251 : 799 - 803
  • [9] THERMAL EVOLUTION OF THE GD/SI(111) INTERFACE - FORMATION OF EPITAXIAL GD SILICIDE
    HENLE, WA
    RAMSEY, MG
    NETZER, FP
    CIMINO, R
    BRAUN, W
    [J]. SOLID STATE COMMUNICATIONS, 1989, 71 (08) : 657 - 660
  • [10] FORMATION OF EPITAXIAL YTTRIUM AND ERBIUM SILICIDE ON SI(111) IN ULTRAHIGH-VACUUM
    SIEGAL, MP
    KAATZ, FH
    GRAHAM, WR
    SANTIAGO, JJ
    VANDERSPIEGEL, J
    [J]. APPLIED SURFACE SCIENCE, 1989, 38 (1-4) : 162 - 170