Hot-electron transport, noise, and power dissipation in GaN channels at high density of electrons

被引：2
|
作者：
Matulionis, A. [1 ]
Liberis, J. [1 ]
Ramonas, M. [1 ,2 ]
Matulioniene, I. [1 ]
机构：
[1] Inst Semicond Phys, Fluctuat Res Lab, LT-01108 Vilnius, Lithuania
[2] Bundeswehr Univ, EIT4, D-85577 Neubiberg, Germany
来源：
ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.113.967
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
引用
收藏
页码：967 / 970
页数：4
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