Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

被引：11

作者：

Tian, Liang ^{[1
]}

Soum-Glaude, Adurey ^{[1
]}

Volpi, Fabien ^{[1
]}

Salvo, Luc ^{[1
]}

Berthome, Gregory ^{[1
]}

Coindeau, Stephane ^{[1
]}

Mantoux, Arnaud ^{[1
]}

Boichot, Raphael ^{[1
]}

Lay, Sabine ^{[1
]}

Brize, Virginie ^{[1
]}

Blanquet, Elisabeth ^{[1
]}

Giusti, Gael ^{[2
]}

Bellet, Daniel ^{[2
]}

机构：

[1] Univ Grenoble Alpes, CNRS, SIMaP Lab, F-38000 Grenoble, France

[2] Univ Grenoble Alpes, CNRS, LMGP Lab, F-38000 Grenoble, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2015年 / 33卷 / 01期

关键词：

SILICON SOLAR-CELLS; CHEMICAL-VAPOR-DEPOSITION; TRANSPARENT ELECTRODES; OPTICAL-PROPERTIES; PERFORMANCE;

D O I：

10.1116/1.4904025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Undoped and nitrogen doped TiO2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 degrees C and nitrogen incorporation was achieved by using titanium isopropoxide, NH3 and/or N2O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Omega cm (+/-10 Omega cm) combined with an average total transmittance of 60% in the 400-1000 nm wavelength range. Eventually, TiO2 thin films were deposited on the 3D metallic foam template. (C) 2014 American Vacuum Society.

引用

页数：8

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