Estimating the Reliability of Series-Connected Schottky Diodes for High-Frequency Rectification

被引:0
|
作者
Park, Sanghyeon [1 ]
Zulauf, Grayson [1 ]
Rivas-Davila, Juan [1 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
RATIO;
D O I
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a method to predict the over voltage failure rate of diodes connected in series under high frequency reverse bias. Conventional approaches use balancing capacitors to ensure the reliability of series-connected diodes at. high frequency. Instead, we investigate the viability of achieving voltage balance between devices solely by the match between their junction capacitances. Serializing diodes without extra balancing components increases the blocking voltage and decreases the capacitance, allowing high-voltage conversion at high frequencies for applications such as X-ray. We measure statistical properties of junction capacitances to estimate the reverse voltage limit of 2, 3, and 4 diodes in series. The predicted failure rate shows a good agreement with experimental results.
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页数:9
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