Polarity determination in ZnSe nanowires by HAADF STEM

被引：1
|
作者：
Den Hertog, M. [1 ]
Elouneg-Jamroz, M. [1 ]
Bellet-Amalric, E. [2 ]
Bounouar, S. [2 ]
Bougerol, C. [1 ]
Andre, R. [1 ]
Genuist, Y. [1 ]
Poizat, J. P.
Kheng, K. [2 ]
Tatarenko, S. [1 ]
机构：
[1] CNRS, Inst Neel, 25 Rue Martyrs,BP 166, F-38042 Grenoble 9, France
[2] CEA Grenoble, INAC SP2M, F-38054 Grenoble, France
来源：
17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011 | 2011年 / 326卷
关键词：
TILT;
D O I：
10.1088/1742-6596/326/1/012044
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The experimental results are compared to simulated images in order to verify possible experimental artefacts. In this work we show that for this type of nano-objects, a residual tilt of the specimen below 15 mrad, away from the crystallographic zone axis, does not impair the interpretation of the experimental images.
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页数：4
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