Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

We report growth of self-organized In0.4Ga0.6 As quantum dots on Si substrates by molecular- beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of In0.4Ga0.6 As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6 As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that I-th = 3.85 kA/cm(2). The lasing spectral output has a peak emission wavelength of 1.013 mm and a linewidth (full width at half maximum) of similar to 4 Angstrom at the threshold. (C) 1999 American Institute of Physics. [S0003-6951(99)02010-0].