Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach

被引：81
|
作者：
Iotti, RC
Rossi, F
机构：
[1] Politecn Torino, Ist Nazl Fis Mat, I-10129 Turin, Italy
[2] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[3] Scuola Normale Super Pisa, I-56126 Pisa, Italy
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 19期
关键词：
D O I：
10.1063/1.1370537
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we present a microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices. In particular, a global Monte Carlo simulation scheme is proposed in order to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between intercarrier thermalization and phonon-assisted relaxation in quantum-cascade lasers is investigated and their relative importance on device performance is clearly identified. (C) 2001 American Institute of Physics.
引用
收藏
页码：2902 / 2904
页数：3
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