Using tunneling junction to enhance hole-injection in organic light-emitting diodes

被引：0
|
作者：
Chang, Chan-Ching [1 ]
Hwang, Shiao-Wen
Hsieh, Ming-Ta [1 ]
Ma, Jia-Wei
Chen, Chin H.
Chen, Jenn-Fang [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq(3)/WO3 layer. The device, ITO/Mg:Alq(3)/WO3/NPB/Alq(3)/LiFAl achieved one of the lowest driving voltages of 5.8 V at 20mA/cm(2) for conventional small molecule OLEDs. We propose the laminated Mg:Alq(3)/WO3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq(3) emitter.
引用
收藏
页码：687 / 690
页数：4
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