Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications

被引：0

作者：

Heil, SBS ^{[1
]}

Langereis, E ^{[1
]}

Roozeboom, F ^{[1
]}

Kemmeren, A ^{[1
]}

Pham, NP ^{[1
]}

Sarro, PM ^{[1
]}

van de Sanden, MCM ^{[1
]}

Kessels, WMM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

Materials, Technology and Reliability of Advanced Interconnects-2005 | 2005年 / 863卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A plasma-assisted atomic layer deposition (PA-ALD) process of titanium nitride (TiN) using TiCl4 precursor dosing and H-2/N-2 plasma exposure is presented. In situ spectroscopic ellipsometry revealed a growth rate at 400 degrees C of similar to 0.7 angstrom/cycle independent of precursor dosing. Varying the plasma exposure time changed the stoichiometry [N]/[Ti] of the films within the range similar to 0.93-1.15. At 100 degrees C a relatively low chlorine impurity level (similar to 2 at. %) and low resistivity (similar to 200 mu Omega(.)cm) were obtained for a similar to 45 nm thick film. The growth rate was found to be considerably lower (similar to 0.3 angstrom/cycle) at this temperature. Using TEM imaging we found that PAALD TiN films can be deposited conformally in 20:1 aspect-ratio features (1.5 mu m width) but that the step coverage still needs to be improved, probably by a prolonged plasma exposure step.

引用

页码：215 / 220

页数：6

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