Estimation of critical thickness of Stranski-Krastanow transition in GeSi/Sn/Si system

被引：0

作者：

Lozovoy, K. A. ^{[1
]}

Pishchagin, A. A. ^{[1
]}

Kokhanenko, A. P. ^{[1
]}

Voitsekhovskii, A. V. ^{[1
]}

机构：

[1] Tomsk State Univ, Fac Radiophys, 36 Lenin Av, Tomsk 634050, Russia

来源：

4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷

关键词：

MOLECULAR-BEAM EPITAXY; SN; GROWTH; HETEROEPITAXY; SURFACE;

D O I：

10.1088/1742-6596/917/3/032012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper Stranski-Krastanow growth of GexSi1-x epitaxial layers on the Si(001) surface with pre-deposited tin layer with the thickness less than 1 ML is considered. For the calculations of critical thickness of transition from 2D to 3D growth in this paper a theoretical model based on general nucleation theory is used. This model is specified by taking into account dependencies of elastic modulus, lattices mismatch and surface energy of side facet on the composition x,as well as change in the adatoms diffusion coefficient and surface energy of the substrate in the presence of tin. As a result, dependencies of critical thickness of StranskiKrastanow transition on compositon x and temperature are obtained. The simulated results are in a good agreement with experimentally observed results.

引用

页数：3

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