Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

被引:0
|
作者
Liu, Fangyue
Tan, Kian-Ming
Wang, Xincai
Low, David Kuang Yong
Lai, Doreen Mei Ying
Lim, Poh Chong
Samudra, Ganesh
Yeo, Yee-Chia [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore
[2] SIMTECH, Singapore 638075, Singapore
[3] Inst Mat Res & Engn, Agcy Sci Technol & Res, Singapore 117685, Singapore
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D O I
10.1063/1.2812565
中图分类号
O59 [应用物理学];
学科分类号
摘要
The supersaturated and metastable boron produced by laser anneal could deactivate during post-laser-thermal-cycles and lead to undesirable performance degradation. The effect of tin incorporation on the thermal stability of boron was studied for the first time and suppressed boron deactivation during post-laser-rapid-thermal-anneal was observed with tin coimplantation. High resolution x-ray diffraction measurement indicates that the tensile strain caused by a high boron concentration was reduced by the introduction of tin, which effectively reduces the strain energy and therefore, enhances the thermal stability of boron in post-laser-anneal rapid thermal processing.(c) 2007 American Institute of Physics.
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页数:4
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