Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation

被引：20
|
作者：
Singh, Rajbir [1 ,2 ]
Vandana [1 ,2 ]
Panigrahi, Jagannath [1 ,2 ]
Singh, P. K. [1 ,2 ]
机构：
[1] CSIR Natl Phys Lab CSIR NPL Campus, Acad Sci & Innovat Res AcSIR, New Delhi, India
[2] CSIR NPL, Silicon Solar Cell Grp, Network Inst Solar Energy, New Delhi, India
来源：
RSC ADVANCES | 2016年 / 6卷 / 100期
关键词：
FIELD-EFFECT PASSIVATION; SOLAR-CELLS; THIN-FILMS; RECOMBINATION PARAMETERS; SI-SIO2; INTERFACE; GATE DIELECTRICS; HFO2; FILMS; AL2O3; SI; ILLUMINATION;
D O I：
10.1039/c6ra19442g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The purpose of this paper is to investigate silicon surface passivation using plasma assisted atomic layer deposited hafnium oxide films, which is an area that is not very well explored. The effect of oxide thickness and post deposition annealing is investigated. At intermediate injection levels, effective surface recombination velocity below 40 cm s(-1) is achieved in n-type c-Si, demonstrating a good level of surface passivation after 12 min of annealing in nitrogen ambient. The capacitance-voltage characteristics of the MOS capacitor show that effective oxide charges in annealed films are high, as compared to as-deposited films, whereas, the interface defect density decreases with annealing (similar to 10(12) eV(-1) cm(-2)). A combination of chemical and field effects leads to good quality silicon surface passivation.
引用
收藏
页码：97720 / 97727
页数：8
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