Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

被引：5

作者：

Lv, Meng ^{[1
]}

Wang, Hao ^{[2
]}

Xu, Yonggang ^{[1
]}

Yu, Guolin ^{[1
]}

Zhang, Huahan ^{[2
]}

Lin, Tie ^{[1
]}

Hu, Gujin ^{[1
]}

Dai, Ning ^{[1
,3
,4
]}

Chu, Junhao ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[3] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Peoples R China

[4] Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 15期

基金：

中国国家自然科学基金;

关键词：

NEGATIVE MAGNETORESISTANCE; WEAK-LOCALIZATION; DIODES; TEMPERATURE;

D O I：

10.1063/1.4918541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We comprehensively investigate magnetotransport properties of MgZnO thin film grown on ZnO substrate by molecular-beam epitaxy. We measure the weak localization effect and extract the electron phase coherence length by fitting to a three-dimensional weak localization theory and by analyzing the different changing rate of the magnetoresistance, results of which are in good agreement with each other. The phase coherence length ranges from 38.4 +/- 1nm at 50K to 99.8 +/- 3.6nm at 1.4K, almost the same as that of ZnO nanoplates and In-doped ZnO nanowires, and its temperature dependence is found to scale as T-3/4. Meanwhile, we study the anisotropic magnetoresistance resulting from the geometric effect as well as the Lorentz force induced path-length effect, which will be enhanced in higher magnetic fields. (C) 2015 AIP Publishing LLC.

引用

页数：6

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