Synthesis of Few-layer (Graphene on a Ni Substrate by Using DC Plasma Enhanced Chemical Vapor Deposition (PE-CVD)

被引：15

作者：

Kim, Jeong Hyuk ^{[1
]}

Castro, Edward Joseph D. ^{[1
]}

Hwang, Yong Gyoo ^{[1
]}

Lee, Choong Hun ^{[1
]}

机构：

[1] Wonkwang Univ, Reg Innovat Ctr Next Generat Ind Radiat Technol, Div Microelect & Display Technol, Iksan 570479, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 58卷 / 01期

关键词：

DC PE-CVD; Graphene; Raman spectroscopy; Ni substrate; CARBON NANOTUBES; RAMAN-SPECTROSCOPY; LARGE-AREA; GRAPHENE SHEETS; LOW-TEMPERATURE; SINGLE-LAYER; FILMS; CVD; GROWTH; NUMBER;

D O I：

10.3938/jkps.58.53

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl(3(aq)) solution, which could then be transferred to the desired. substrate.

引用

页码：53 / 57

页数：5

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