Nickel metal induced latera crystallization of patterned amorphous silicon thin film

被引:3
|
作者
Nakagawa, Gou [1 ]
Asano, Tanemasa [1 ]
机构
[1] Kyushu Univ, Grad Sch Info Sci & Elec Engn, Fukuoka 8190395, Japan
关键词
poly-Si; thin film transistor; metal-induced lateral crystallization; Ni; NiSi2; needle-like Si; dendrite crystal; grain-filtering;
D O I
10.4028/www.scientific.net/MSF.561-565.1149
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Metal-Induced lateral crystallization (MILC) of patterned amorphous silicon(a-Si) thin film using Ni as a catalyst has been investigated. Ni-MILC grains are based on the growth of needle-like crystals due to the migration of NiSi2 precipitates, which located at the crystalline front, along the (111) directions. In the case where the needle-like crystallites collided at the a-Si pattern edge, not only "turn" or "branch" of the needle-like crystallites toward one of the possible (111) directions but also the growth along the pattern edge were observed. By limiting the growth area, the competitive growth of dendrite crystals that originated in needle-like crystallites was found to appear. This phenomenon resulted in the orientation alignment of MILC crystals in a wide area. Besides, the grain-filtering of MILC crystals was found to be possible by narrowing the pattern width.
引用
收藏
页码:1149 / 1152
页数:4
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