Radiation hardening of silicon strip detectors

被引：3
|
作者：
Yoshida, S
Ohsugi, T
Fukazawa, Y
Yamamura, K
Yamamoto, K
Sato, K
机构：
[1] Hiroshima Univ, Dept Phys, Higashihiroshima 7398526, Japan
[2] Hamamatsu Photon KK, Hamamatsu, Shizuoka, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 514卷 / 1-3期
关键词：
radiation hardening; radiation damage; surface radiation damage; silicon strip detector; GLAST;
D O I：
10.1016/j.nima.2003.08.081
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We introduce two methods to reduce the surface radiation damage of silicon strip detectors. The microscopic reason of surface radiation damage is mainly due to the generation of radiation induced interface traps. The interface traps formation occurs as a result of a series of processes initiated by the creation of electron-hole pairs in SiO2 layer and the subsequent transport of the holes to the SiO2/Si interface. To prevent the transport of holes to the SiO2/Si interface, we tried two different methods. The leakage current after irradiation decreased by 26% and 67% using these methods. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：38 / 43
页数：6
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