Resonant Spin-Transfer Torque Magnetoresistive Memory

被引：2

作者：

Zhu, Jian-Gang ^{[1
]}

Shadman, Abir ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2019年 / 55卷 / 03期

基金：

美国安德鲁·梅隆基金会;

关键词：

Ferromagnetic resonance; spin-transfer torque (STT); STT magnetoresistive random access memory (MRAM); NOISE;

D O I：

10.1109/TMAG.2018.2871774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Perpendicularly spin-polarized current in the antiferromagnetic thin-film layer can generate in-plane spin precession. Incorporating this mechanism, a thin-film stack including a layer of antiferromagnetic material is added to the conventional spin-transfer torque (STT) magnetoresistive memory element to generate an additional rotating STT on the free/storage layer. With the chirality and frequency of the rotating STT matching the ferromagnetic resonance condition of the free layer, the switching current threshold, particularly for the switching from parallel to antiparallel states, can be significantly reduced.

引用

页数：7

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