Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

被引:2
|
作者
Birkett, Martin [1 ]
Penlington, Roger [1 ]
机构
[1] Northumbria Univ, Fac Engn & Environm, Ellison Bldg, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England
来源
MATERIALS RESEARCH EXPRESS | 2016年 / 3卷 / 07期
关键词
resistivity; thin film; CuAlMo; MEAN FREE-PATH; METALLIC-FILMS; DEPOSITION; RESISTANCE; CONDUCTION; SURFACE;
D O I
10.1088/2053-1591/3/7/075021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba's model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of- 55 and + 125 degrees C and the temperature co-efficient of resistance was less than +/- 15 ppm degrees C-1.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering
    Birkett, Martin
    Penlington, Roger
    Wan, Chaoying
    Zoppi, Guillaume
    THIN SOLID FILMS, 2013, 540 : 235 - 241
  • [2] Fabrication and resistivity of ZnO:Al thin films prepared by DC magnetron sputtering at room temperature
    Ren, Mingfang
    Wang, Hua
    Xu, Jiwen
    Yang, Ling
    Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2009, 30 (03): : 344 - 347
  • [3] Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
    Agustsson, J. S.
    Arnalds, U. B.
    Ingason, A. S.
    Gylfason, K. B.
    Johnsen, K.
    Olafsson, S.
    Gudmundsson, J. T.
    APPLIED SURFACE SCIENCE, 2008, 254 (22) : 7356 - 7360
  • [4] Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO2
    Agustsson, J. S.
    Arnalds, U. B.
    Ingason, A. S.
    Gylfason, K. B.
    Johnsen, K.
    Olafsson, S.
    Gudmundsson, J. T.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100 (PART 8):
  • [5] Low resistivity transparent conducting CdO thin films deposited by DC reactive magnetron sputtering at room temperature
    Zhou, Qiang
    Ji, Zhenguo
    Hu, BinBin
    Chen, Chen
    Zhao, Lina
    Wang, Chao
    MATERIALS LETTERS, 2007, 61 (02) : 531 - 534
  • [6] ZnxZryOz thin films grown by DC magnetron sputtering
    Sanchez, O.
    Hernandez-Velez, M.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (10):
  • [7] Transparent conducting TGZO thin films deposited by DC magnetron sputtering at room temperature
    Liu, Han-fa
    Zhang, Hua-fu
    OPTOELECTRONIC MATERIALS, PTS 1AND 2, 2010, 663-665 : 1041 - 1044
  • [8] Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering
    Phae-Ngam, Wuttichai
    Lertvanithphol, Tossaporn
    Chananonnawathorn, Chanunthorn
    Kowong, Rattanachai
    Horprathum, Mati
    Meksuk, Sainampeung
    Waikhamnuan, Nat
    Thonglem, Sutatip
    MATERIALS TODAY-PROCEEDINGS, 2021, 47 : 3468 - 3470
  • [9] Physical and electrical properties of molybdenum thin films grown by DC magnetron sputtering for photovoltaic application
    Rashid, Haroon
    Rahman, Kazi Sajedur
    Hossain, Mohammad Istiaque
    Nasser, Ammar Ahmed
    Alharbi, Fahhad H.
    Akhtaruzzaman, Md.
    Amin, Nowshad
    RESULTS IN PHYSICS, 2019, 14
  • [10] STRUCTURE AND ELECTRICAL RESISTIVITY DEPENDENCE OF MOLYBDENUM THIN FILMS DEPOSITED BY DC MODULATED PULSED MAGNETRON SPUTTERING
    Wicher, B.
    Chodun, R.
    Nowakowska-Langier, K.
    Okrasa, S.
    Krol, K.
    Minikayev, R.
    Strzelecki, G.
    Zdunek, K.
    ARCHIVES OF METALLURGY AND MATERIALS, 2018, 63 (03) : 1339 - 1344