Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al2O3 and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Omega/square and resistance stability of 0.45 to 0.65% with a TCR of -90 ppm/degrees C which could be shifted to zero following annealing in air at 425 degrees C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Omega/square and inferior stability of 0.8 to 1.7% with a more negative TCR of -110 to -180 ppm/degrees C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to <0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 degrees C was required to stabilise the films and set the electrical properties. (C) 2013 Elsevier B.V. All rights reserved.