Surface deformation phenomena induced by electron-beam irradiation in InGaAs/AlGaAs strained layers on GaAs (100) and (311)B substrates

被引：0
|
作者：
Ogawa, T [1 ]
Kawase, M [1 ]
Akabori, M [1 ]
Motohisa, J [1 ]
Fukui, T [1 ]
机构：
[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712695
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have found that mass transport phenomena were induced by electron-beam irradiation in strained In0.36Ga0.64As/Al0.3Ga0.7As layers on GaAs (100) and (311)B substrates. The strained InGaAs/AlGaAs layer structures have been grown on GaAs (100) and (311)B substrates in a horizontal low-pressure metaloganic vapor phase epitaxy system at a temperature of 800 degrees C and 830 degrees C. In the surface observation using high-resolution scanning electron microscope, the surface morphology was changed into a deformed structure by electron beam with the accelerating voltage of 30kV and the scanning time of 60 similar to 120 sec. The surface deformation phenomena were observed in real time on the display of SEM, the deformation was not amorphous-carbon contamination. The mass transport seems to be caused by the residual strain relaxation due to electron-beam irradiation.
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收藏
页码：607 / 610
页数：4
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