Effects of conduction band offset on spin-polarized transport through a semimagnetic semiconductor heterostructure

被引:5
|
作者
Zhai, F [1 ]
Guo, Y
Gu, BL
机构
[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China
[2] Tsing Hua Univ, Ctr Adv Study, Beijing 100084, Peoples R China
关键词
D O I
10.1063/1.1384485
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the role played by the zero-field conduction band offset in spin-dependent transport through a ZnSe/Zn1-xMnxSe heterostructure with a single paramagnetic layer. It is shown that the zero-field band offset can strongly affect features of spin-polarized transport: the spin polarization is greatly weakened for the negative zero-field offset while in the positive case it is drastically enhanced. The reason is that the polarization is determined by the discrepancy between the effective potential for spin-up electrons and that for spin-down ones. Furthermore, the magnitude of the effective potential as well as its configuration are conduction-band-offset dependent and field tunable. (C) 2001 American Institute of Physics.
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页码:1328 / 1332
页数:5
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