Digital circuit design challenges and opportunities in the era of nanoscale CMOS

被引:125
|
作者
Calhoun, Benton H. [1 ]
Cao, Yu [2 ]
Li, Xin [3 ]
Mai, Ken [3 ]
Pileggi, Lawrence T. [3 ]
Rutenbar, Rob A. [3 ]
Shepard, Kenneth L. [4 ]
机构
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[3] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[4] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
clock distribution; complementary metal-oxide-semiconductor (CMOS); device scaling; digital circuits; lithography; logic; manufacturability; memory; optimization; power distribution; regular circuit fabrics; statistical variability; yield;
D O I
10.1109/JPROC.2007.911072
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Well-designed circuits are one key "insulating" layer between the increasingly unruly behavior of scaled complementary metal-oxide-semiconductor devices and the systems we seek to construct from them. As we move forward into the nanoscale regime, circuit design is burdened to "hide" more of the problems intrinsic to deeply scaled devices. How this is being accomplished is the Subject of this paper. We discuss new techniques for logic circuits and interconnect, for memory, and for clock and power distribution. we survey work to build accurate simulation models for nanoscale devices. We discuss the unique problems posed by nanoscale lithography and the role of geometrically regular circuits as one promising solution. Finally, we look at recent computer-aided design efforts in modeling, analysis, and optimization for nanoscale designs with ever increasing amounts of statistical variation.
引用
收藏
页码:343 / 365
页数:23
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