Impact of three-dimensional stacking silicon on diamond substrate for the electrostatic discharge protection device

被引：1
|
作者：
Ikeda, Yuho [1 ]
Nakagawa, Kentaro [1 ]
Yoshida, Wataru [1 ]
Matsumoto, Satoshi [1 ]
机构：
[1] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
D O I：
10.7567/JJAP.55.04ER20
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, the electrostatic-discharge (ESD) protection capabilities of the protection devices fabricated on a silicon-on-diamond (SOD) structure and a conventional Si substrate are compared. The results showed that the ESD protection capability of the SOD substrate is higher than that of the silicon-on-insulator (SOI) substrate. We also evaluate the ESD protection device suitable for the SOD structure. In addition, we propose the three-dimensional (3D) stacking structure suitable for a power supply on a chip (power-SoC) and the best location for the implementation of the ESD protection device based on the results of device simulations. (C) 2016 The Japan Society of Applied Physics
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页数：5
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