A back-to-face silicon layer stacking for three-dimensional integration

被引：5
|
作者：
Tan, CS [1 ]
Chen, KN [1 ]
Fan, A [1 ]
Reif, R [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2005年
关键词：
D O I：
10.1109/SOI.2005.1563545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：87 / 89
页数：3
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