Spontaneous carrier generation and low recombination in high-efficiency non-fullerene solar cells

被引:31
|
作者
Zhou, Guanqing [1 ,2 ]
Zhang, Ming [1 ,2 ]
Xu, Jinqiu [1 ,2 ]
Yang, Yankang [1 ,2 ]
Hao, Tianyu [1 ,2 ]
Zhu, Lei [1 ,2 ]
Zhou, Libo [1 ,2 ]
Zhu, Haiming [3 ]
Zou, Yecheng [4 ,5 ]
Wei, Gang [4 ,5 ]
Zhang, Yongming [1 ,2 ,4 ,5 ]
Liu, Feng [1 ,2 ,4 ,5 ]
机构
[1] Shanghai Jiao Tong Univ, Frontiers Sci Ctr Transformat Mol, In Situ Ctr Phys Sci, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China
[2] Shanghai Jiao Tong Univ, Ctr Hydrogen Sci, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China
[3] Zhejiang Univ, Dept Chem, Hangzhou 310027, Zhejiang, Peoples R China
[4] State Key Lab Fluorinated Funct Membrane Mat, Zibo 256401, Shandong, Peoples R China
[5] Dongyue Future Hydrogen Energy Mat Co, Zibo 256401, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE RECOMBINATION; ACCEPTOR; ENERGY;
D O I
10.1039/d2ee01327d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The current research reveals the unique photo physical properties and carrier generation mechanisms of high efficiency non-fullerene acceptor-based organic photovoltaic blends. The analysis of device performance, morphology, and photo physics reveals that the interface carrier generation cannot support the device's current output. It is seen that primary photon excitons can dissociate into charge carriers in Y6, which displays a time scale of similar to 0.3 ps with polaron yields above 28% in neat and blended thin films. This characteristic in combination with a large exciton diffusion length enables high morphology tolerance in Y6-overloaded blends. The carrier generation process is also combined with recombination studies. The recombination rate quantified by flux-dependent transient absorption measurements yields less than 5% total recombination and nearly 0% geminate recombination. These results define the advantages of the Y6 non-fullerene acceptor (NFA) and reveal the fundamental importance of developing new NFA materials with superior photo physical properties.
引用
收藏
页码:3483 / 3493
页数:11
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