Study of the metal-semiconductor contact to ZnO films

被引：11
|
作者：
Yan, Yu [1 ]
Mi, Wei [1 ]
Zhao, Jinshi [1 ]
Yang, Zhengchun [1 ]
Zhang, Kailiang [1 ]
Luan, Chongbiao [2 ]
机构：
[1] Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, 391 West Binshui Rd, Tianjin 300384, Peoples R China
[2] China Acad Engn Phys, Inst Fluid Phys, Mianshan Rd 64, Mianyang 621999, Sichuan, Peoples R China
来源：
VACUUM | 2018年 / 155卷
基金：
中国国家自然科学基金;
关键词：
ZnO; Thin films; Ohmic contact; THIN-FILMS; OHMIC CONTACTS; SOLAR-CELLS; FABRICATION; DEPOSITION;
D O I：
10.1016/j.vacuum.2018.06.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High resistance Zinc oxide (ZnO) films have been prepared on Si (100) substrates using magnetron sputtering method. Structure analysis revealed a clear out-of-plane orientation of ZnO (001) parallel to Si (100). The metallic composition of the contact is a critically important parameter for making ohmic contacts to ZnO films. Al/Ti metal contacts show linear I-V characteristics indicative of ohmic behavior, while other metal contacts such as Al and Ti show nonlinear characteristics with rectification, that reveal the presence of schottky barriers.
引用
收藏
页码：210 / 213
页数：4
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