Femtosecond surface-emitting lasers

被引:0
|
作者
Tropper, A. C. [1 ]
机构
[1] Univ Southampton, Southampton SO17 1BJ, Hants, England
基金
英国工程与自然科学研究理事会;
关键词
semiconductor laser; ultrafast laser; quantum well; VECSEL; SOLITON-LIKE PULSE; SEMICONDUCTOR DISK LASER; MW AVERAGE POWER; REPETITION-RATE; SATURABLE ABSORBER; MODE-LOCKING; PICOSECOND; AMPLIFICATION; GENERATION; VECSELS;
D O I
10.1117/12.873817
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Diode-pumped solid state lasers, long dominant in many high power applications, now face a challenge from optically-pumped semiconductor lasers, which add spectral versatility to the good beam quality and potential for power-scaling that are characteristic of optically-pumped disc lasers. The vertical-external-cavity surface-emitting semiconductor laser, or VECSEL, readily exhibits passive mode- locking with the inclusion of a semiconductor saturable absorber mirror ( SESAM) in the external cavity. These devices most often emit picosecond pulses, recruiting only a small fraction of the available gain bandwidth of the quantum wells. If the dispersive and filtering effects of the multilayer gain and saturable absorber structures are well- controlled, however, it is possible to observe clean sub- picosecond pulses of duration down to 100fs and below. The presentation will describe SESAM- mode- locked VECSELs based on compressively strained InGaAs/ GaAs quantum wells that generate trains of near- transform- limited femtosecond pulses at wavelengths around 1. m with average power of 30 - 300 mW. The nonlinear optical response of the quantum well SESAM in this regime is investigated using a numerical model in which the resonantly excited carriers are coupled by scattering to states outside the laser bandwidth.
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