Low cost ultra widebrand amplifier in 0.35 μm CMOS process

被引：0
|
作者：
Modha, Kuldip N. [1 ]
Hayes-Gill, Barrie [1 ]
Harrison, Ian [1 ]
机构：
[1] Univ Nottingham, Sch Elect Elect Engn, Nottingham NG7 2RD, England
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2008年 / 50卷 / 07期
关键词：
UWB; amplifier; CMOS; wideband; VLSI;
D O I：
10.1002/mop.23525
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two stage ultra wideband (UWB) amplifier is presented. This amplifier incorporates multiple bandwidth enhancing techniques and is implemented in Austria micro systems (AMS) 0.35 mu m CMOS process technology. The amplifier consumes 39.5 mW of power exhibits a maximum gain of 13 dB, has input and output reflections below -9 and -10 dB, respectively over a -3 dB bandwidth of 4 GHz. The average measured noise figure is 6 dB and 1 dB compression point at 3 GHz is -12 dBm. (c) 2008 Wiley Periodicals, Inc.
引用
收藏
页码：1879 / 1881
页数：3
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