2.9GHz 0.35μm CMOS low noise amplifier

With the scaling-down of the transistor gate-length, and the transit frequency of MOSFET of very-deep Submicron meter (VDSM) CMOS technology has reached higher than 50GHz. It is possible to use the CMOS technology to design high frequency analog integrated circuits that operate in GHz. More and more RF engineers begin to design the RF integrate circuit by advanced CMOS technology. This paper presents a 2.9GHz CMOS low noise amplifier, which is implemented in 0.35μm CMOS technology. The on-chip spiral inductors are utilized for the low noise performance and monolithic integration. With the 3V-power supply, the operation current is about 8mA. The gain at 2.9GHz is larger than 10dB, and the input reflection is less than-12dB at 2.9GHz.