Investigation of hole transport in α-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer

被引：9
|
作者：
Fernandes, Jean Maria [1 ]
Kiran, M. Raveendra [1 ]
Ulla, Hidayath [1 ]
Satyanarayan, M. N. [1 ]
Umesh, G. [1 ]
机构：
[1] Natl Inst Technol Karnataka, Dept Phys, Optoelect Lab, Mangalore 575025, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 83卷
关键词：
Charge-transport; Mobility; Poole-Frenkel; Capacitance; Conductance; Impedance; CHARGE-CARRIER MOBILITY; LIGHT-EMITTING-DIODES; DEEP-BLUE; DERIVATIVES; ELECTRON; PHOTOLUMINESCENCE; TRAPS; CAPACITANCE; ABSORPTION; SPECTRUM;
D O I：
10.1016/j.spmi.2015.04.019
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The charge carrier transport is studied in N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (alpha-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of alpha-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：766 / 775
页数：10
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