Crystal data, electrical resistivity, and Hall mobility of n-type AgIn5S8 single crystals

被引：0
|
作者：
Qasrawi, AF [1 ]
Gasanly, NM
机构：
[1] Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey
[2] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2001年 / 36卷 / 4-5期
关键词：
AgIn5S8; crystal; resistivity; mobility; acoustic; polar; scattering mechanism;
D O I：
10.1002/1521-4079(200106)36:4/5<457::AID-CRAT457>3.0.CO;2-I
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
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页码：457 / 464
页数：8
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