Fabrication of 50 nm Metallic Lines for High Frequency Devices

被引：0
|
作者：
Liu, Xiaoyi [1 ,2 ]
Liao, Biyan [1 ,2 ]
Gao, Sheng [1 ,2 ]
Wang, Hong [1 ,2 ,3 ]
机构：
[1] South China Univ Technol, Engn Lab Wide Band Gap Semicond Mat & Devices Gua, Sch Elect & Informat Engn, Guangzhou 510640, Peoples R China
[2] South China Univ Technol, Engn Res Ctr Optoelect, Sch Phys & Optoelect, Guangzhou 510640, Peoples R China
[3] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China
来源：
2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019) | 2019年
关键词：
PERFORMANCE;
D O I：
10.1109/icmmt45702.2019.8992410
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, several metals including titanium nitride (TiN), titanium (Ti), aluminum (Al), nickel (Ni) and gold (Au), were fabricated into metallic lines with line widths less than 50 nm through electron beam lithography (EBL) and dry-etching. The lines are defined by EBL and the line widths are further reduced by oxygen cleaning from over 50 nm into about 40nm. Besides, the angle and etching rate are adjusted by gas flow and power during etching process. With these metallic lines as gate electrodes, the cutoff frequency of high electron mobility transistors can reach more than 100 GHz, and this process can be used in metal interconnection of high frequency devices as well.
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页数：3
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