Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with high-k gate dielectrics

被引：0
|
作者：
Goswami, Srirupa [1 ]
Biswas, Abhijit [1 ]
机构：
[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, India
来源：
2009 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN ELECTRONIC AND PHOTONIC DEVICES AND SYSTEMS (ELECTRO-2009) | 2009年
关键词：
strained-Si; high-k; gate leakage current; MOSFETs; OXIDE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of strain on the gate leakage current has been investigated analytically in detail for strained-Si channel MOSFETs for a range of gate voltages and the gate insulator thicknesses. Our analysis relies on the determination of surface potential by solving the Poisson's equation using both the analytical and numerical approaches. The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities along with their sub components have been determined analytically for a wide range of strain values. Further the validity of our model has been confirmed by comparing our theoretical results for the gate leakage current density with the reported experimental data.
引用
收藏
页码：33 / 36
页数：4
相关论文
共 50 条
  • [31] Perspectives paper:: First principles modeling of high-k gate dielectrics
    Kawamoto, A
    Cho, KJ
    Dutton, R
    JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN, 2001, 8 (01): : 39 - 57
  • [32] Process technology - Gate dielectrics - SiON and high-k dielectrics
    Martin, F.
    Lee, J.
    Technical Digest - International Electron Devices Meeting, 2000,
  • [33] Mechanism of gradual increase of gate current in high-k gate dielectrics and its application to reliability assessment
    Okada, Kenji
    Horikawa, Tsuyoshi
    Satake, Hideki
    Ota, Hiroyuki
    Ogawa, Arito
    Nabatame, Toshihide
    Toriumi, Akira
    2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, : 189 - +
  • [34] Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS
    Weber, O
    Bogumilowicz, Y
    Ernst, T
    Hartmann, JM
    Ducroquet, F
    Andrieu, F
    Dupré, C
    Clavelier, L
    Le Royer, C
    Cherkashin, N
    Hytch, M
    Rouchon, D
    Dansas, H
    Papon, AM
    Carron, V
    Tabone, C
    Deleonibus, S
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 143 - 146
  • [35] Inversion mobility and gate leakage in high-k/metal gate MOSFETs
    Kotlyar, R
    Giles, MD
    Matagne, P
    Obradovic, B
    Shrifen, L
    Stettler, M
    Wang, E
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 391 - 394
  • [36] Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High-K Material as Tunnel Oxide
    Aji, Adha Sukma
    Nugraha, Mohamad Insan
    Yudhistira
    Rahayu, Fitria
    Darma, Yudi
    4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): AN INTERNATIONAL SYMPOSIUM, 2011, 1415
  • [37] A quantum mechanical model of gate leakage current for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes
    Zhang, Yanli
    Jin, Zhian
    Wang, Gan
    Liyanage, Luckshitha S.
    White, Marvin H.
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 80 - 81
  • [38] Gate leakage current simulation for nanoscale NMOSFETs with nitrided gate dielectric by Boltzmann transport equation
    Mitra, S
    Goldsman, N
    Han, Z
    Mirabedini, M
    Aronowitz, S
    Belova, N
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 539 - +
  • [39] Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22 nm node
    Darbandy, Ghader
    Ritzenthaler, Romain
    Lime, Francois
    Garduno, Ivan
    Estrada, Magali
    Cerdeira, Antonio
    Iniguez, Benjamin
    SOLID-STATE ELECTRONICS, 2010, 54 (10) : 1083 - 1087
  • [40] Implementation of high-k gate dielectrics - A status update
    Applied Materials Japan, Inc.; et al.; Japan Electronics and Information Technology Industries Association (JEITA); Japan Society of Applied Physics (JSAP); JSAP Silicon Technology Division; JSAP Thin Film and Surface Physics Division (Institute of Electrical and Electronics Engineers Inc., United States):
12345