Bi-induced phonons in GaAs1-xBix

被引：0
|
作者：
Seong, MJ [1 ]
机构：
[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
来源：
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
GaAs1-xBix (x < 3%) was studied using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm(-1) and 214 cm(-1). By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN-mode) in GaAsN, the phonon mode at 214 cm(-1) is identified as originating from the substitutional Bi at the As-site in GaAsBi.
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页码：419 / 422
页数：4
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