Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

被引：48

作者：

Abou-Ras, Daniel ^{[1
]}

Schmidt, Sebastian S. ^{[1
]}

Schaefer, Norbert ^{[1
]}

Kavalakkatt, Jaison ^{[1
]}

Rissom, Thorsten ^{[1
]}

Unold, Thomas ^{[1
]}

Mainz, Roland ^{[1
]}

Weber, Alfons ^{[1
]}

Kirchartz, Thomas ^{[2
]}

Sanli, Ekin Simsek ^{[3
]}

van Aken, Peter A. ^{[3
]}

Ramasse, Quentin M. ^{[4
]}

Kleebe, Hans-Joachim ^{[5
]}

Azulay, Doron ^{[6
]}

Balberg, Isaac ^{[6
]}

Millo, Oded ^{[6
]}

Cojocaru-Miredin, Oana ^{[7
]}

Barragan-Yani, Daniel ^{[8
]}

Albe, Karsten ^{[8
]}

Haarstrich, Jakob ^{[9
]}

Ronning, Carsten ^{[9
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany

[2] Forschungszentrum Julich, Inst Energie & Klimaforsch IEK 5, Photovolta, D-52428 Julich, Germany

[3] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

[4] SuperSTEM Lab, SciTech Daresbury Campus,Keckwick Lane, Daresbury WA4 4AD, England

[5] Tech Univ Darmstadt, Inst Angew Geowissensch, Schnittspahnstr 9, D-64287 Darmstadt, Germany

[6] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[7] Rhein Westfal TH Aachen, Phys Inst 1A, Sommerfeldstr 14, D-52074 Aachen, Germany

[8] Tech Univ Darmstadt, FG Mat Modellierung, Jovanka Bontschits Str 2, D-64287 Darmstadt, Germany

[9] Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 05期

关键词：

Cu(In; Ga)Se-2; grain boundaries; twin boundaries; stacking faults; dislocations; GRAIN-BOUNDARIES; ATOM-PROBE; POLYCRYSTALLINE CU(IN; GA)SE-2; CUINSE2; DISTRIBUTIONS; ENERGETICS; GRADIENTS; SODIUM;

D O I：

10.1002/pssr.201510440

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)(2) thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)(2) thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：363 / 375

页数：13

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