Performance analysis of electrostatic plasma-based dopingless nanotube TFET

In this paper, the nanotube electrostatic plasma-based tunnel field-effect transistor (EP-NTTFET) has been proposed. The use of external bias on the side contacts of the source/drain region helps in the induction of charge carriers even with the use of the polysilicon electrode. The analog parameters are studied such as OFF-current, ON-current, I-ON/I-OFF, sub-threshold slope, threshold voltage, transconductance, TGF, cut-off frequency and DIBL with channel length (L-C), Nanotube radius (T-Si) and Source voltage (V-S) variation. The channel length (L-C) varies from 10 to 50 nm, OFF-current varies from 3.79 x 10(-13)A/um to 6.79 x 10(-19)A/um, sub-threshold slope improves from 36.88 mV/decade to 9.6 mV/decade and I-ON/I(OFF)current ration improves from the order of 10(7)to 10(13). The nanotube radius (T-Si) varies from 3.5 nm to 12 nm, so ON-current varies from 2.6 x 10(-5)A/um to 4.78 x 10(-5)A/um, OFF-current increases and sub-threshold slope increases from 18.28 mV/decade to 26.9 mV/decade. The source voltage (V-S) varies from - 0.2 V to - 1.2 V, so ON-current varies from 7.88 x 10(-6)A/um to 3 x 10(-5)A/um, OFF-current increases from 6.5 x 10(-19)A/um to 2.25 x 10(-15)A/um, sub-threshold slope improves from 24.84 mV/decade to 20.83 mV/decade and threshold voltage decreases from 0.36 V to 0.25 V. To reduce the thermal budget with simple fabrication steps and lower random dopant fluctuations (RDFs) electrostatics plasma-based nanotube TFET is used. The proposed device EP-NTTFET provides higher ON current, higher I-ON/I(OFF)current ratio, better sub-threshold slope, and lower threshold voltage.