Adhesion investigation of stacked coatings in organic light-emitting diode display architecture

被引:3
|
作者
Lee, Chang-Chun [1 ]
Tsai, Chen-Chu [2 ]
Chuang, Jui-Chang [2 ]
Huang, Pei-Chen [1 ]
Cheng, Sen-Wen [1 ]
Liou, Yan-Yu [1 ]
机构
[1] Chung Yuan Christian Univ, Dept Mech Engn, Res Ctr Microsyst Engn, 200 Chung Pei Rd, Taoyuan 32023, Taiwan
[2] Ind Technol Res Inst, Display Technol Ctr, Panel Integrat Div 2, Bldg 11,195,Sec 4,Chung Hsing Rd, Hsinchu 310, Taiwan
来源
关键词
Organic light-emitting diode; Adhesion; Interfadal crack; Four-point bending test; Finite element analysis; THIN-FILMS; RESISTANCE; FATIGUE;
D O I
10.1016/j.surfcoat.2016.03.041
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Organic light-emitting diode (OLED) display is considered one of the promising portable electronic devices given that the application requirements for the Internet of Things are necessary. Composed of multi-stacked thin films, OLED display needs to bear external gas moisture and various mechanical loadings, such as bend, torsion, and fold. Under these mechanical loadings, OLED devices undergo numerous critical failure modes, one of which is the delamination of stacked films bonded by a glued layer of OLED encapsulation that has become an important reliability concern. Accordingly, this study uses a nonlinear finite element analysis based on fracture mechanics using J-integral and modified virtual crack closure technique. The proposed method is adopted to estimate the adhesions of several concerned interfaces of dissimilar materials bonded with glue through the index of energy release rates. To validate the reliability of the proposed simulation methodology, the adhesion measurement of glue/SiN passivation is performed through a four-point bending test. The analytic results show that a cracking energy up to 20.4 J/m(2) is achieved when the initial delaminated length is similar to 10 mu m and when a glue with an elastic modulus of 22 MPa is considered. In addition, a long interfacial crack length appears to promote the fracture growth of ITO/SiN stacked layers under an ultra-small bending radius of 1 mm. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:226 / 231
页数:6
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