Electron-phonon interactions in bilayer graphene

被引:47
|
作者
Borysenko, K. M. [1 ]
Mullen, J. T. [2 ]
Li, X. [1 ]
Semenov, Y. G. [1 ]
Zavada, J. M. [1 ]
Nardelli, M. Buongiorno [2 ,3 ]
Kim, K. W. [1 ]
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[3] Oak Ridge Natl Lab, CSMD, Oak Ridge, TN 37831 USA
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 16期
关键词
GRAPHITE;
D O I
10.1103/PhysRevB.83.161402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using calculations from first principles, we demonstrate that intrinsic carrier-phonon scattering in bilayer graphene is dominated by low-energy acoustic (and acousticlike) phonon modes in a framework that bears more resemblance to bulk graphite than to monolayer graphene. The total scattering rate at low to moderate electron energies can be described by a simple two-phonon model in the deformation potential approximation with effective constants D-ac approximate to 15 eV and D-op approximate to 2.8 x 10(8) eV/cm for acoustic and optical phonons, respectively. With much enhanced acoustic phonon scattering, the mobility of intrinsic bilayer graphene is estimated to be significantly smaller than that of the monolayer.
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页数:4
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